Feb 16, 2012 - Michael Pilon
Extreme Linear Dynamic Range Detection Using the Charge Injection Device
Charge transfer device optical array detectors are typically classified in three broad categories: charge coupled devices (CCDs) utilizing inter-pixel charge transfer for readout, charge injection devices (CIDs) utilizing intra-pixel charge transfer for readout, and CMOS devices. The latter devices are named for the standard semiconductor processes used in their manufacture rather than the charge transfer mechanism employed for readout. While CCDs are the preferred detectors for photon-starved scientific applications such as astronomy, and CMOS devices are the preferred detectors for high-volume commercial applications such as mobile phone cameras, the CID is the preferred detector for high dynamic range scientific applications such as inductively coupled plasma optical emission spectroscopy (ICP-OES) and particle beam profiling. Since CID pixels are randomly addressable and the photon-generated charge within the pixel can be quantified non-destructively using intra-pixel charge transfer, the integration time may be varied from pixel to pixel based upon the experimentally observed photon flux. Using this exclusive random access integration feature, unprecedented linear dynamic range exceeding 7 orders of magnitude has been demonstrated on full-frame images with a single exposure – several orders of magnitude beyond the capabilities of CCD and most CMOS detectors. The unique CID architecture is described, high-level CID camera capabilities are discussed, and several illustrative imaging applications are presented.
Michael Pilon, General Manager Thermo Fisher Scientific
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April 12, 2012 - Katsumi Kishino
GaN-based Nanocolumn Emitters and related Technologies
GaN nanocolumns, one-dimensional columnar nanocrystals, possess low dislocation and high light extraction efficiency properties; thus, the nanocolumns have a great potentiality to improve substantially the luminous efficiency in the green-to-red emission region. Periodically arranged GaN nanocolumns, in each of which an InGaN/GaN multiple quantum well (MQW) was integrated, were fabricated by a Ti-mask selective area growth (SAG) technique by rf-MBE for GaN. Using the uniform arrays of InGaN-based nanocolumns, we demonstrated successful optically pumped stimulated emissions in the blue-to-green emission range and operation of green emission InGaN-based nanocolumn LEDs; then, a novel technology for controlling the In composition of InGaN quantum wells on the same wafer was developed, which paved the way for the monolithic integration of three-primary-color light-emitting diodes.
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March 20, 2012 - Student/Industry Forum
Student/Industry Forum
Location: Boston University
Note that this meeting will be held on a Tuesday
The NES/OSA in association with the OSA Student Chapter at Boston University, the IEEE Photonics Society and the Optical Society of America will be holding our annual Forum on Optics Jobs in New England. The optics industry is invited to join area students to talk about what graduates can look forward to when they have completed their formal education. The program will include speakers sharing their insights and experience making the transition from student to industry.
Forum Speakers will include:
The meeting will begin with networking including refreshments and a light meal, followed by a panel of up to four 10-15 min talks and a Q&A session, finishing with time for further discussions. Our industry panel will draw speakers from New England's diverse industrial base such as Aerospace, Metrology, Lighting and Bio-Medical.
We encourage our regular members to bring their stories, feel free to share any information about your companies or institutions, and we welcome postings for jobs or internships.
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April 26, 2012 - Kei M. Lau
High-resolution Light Emitting Diode on Silicon (LEDoS) Micro-display and High Speed GaInAs Photodetectors on Silicon
GNitride-based visible light emitting diodes (LEDs) with high external efficiency are widely used for a variety of applications including display backlights and general lighting. The versatility of LED devices can be further enhanced by introducing individually addressable emissive elements on a silicon-based substrate with the use of flip-chip technology. Such passive matrix LED micro-arrays have been demonstrated in the past. However, the array dimensions and pixel brightness in conventional passive addressable LED arrays are limited by the loading effect in the same row or column. Recently, we employed active matrix (AM) addressing scheme to improve the operating effectiveness of LED arrays. LED on Silicon (LEDoS) display panels have great potential on applications such as micro-display in mobile electronics, portable micro-projectors, bio-sensor arrays and programmable lighting sources.
In this work, we report the development of high-resolution LEDoS micro-array display panels (6mm×7mm in size), by integrating an InGaN Multiple Quantum Well (MQW) Ultraviolent (UV) LED micro-array to a AM silicon-based substrate. The LEDoS device included two main parts: LED micro-array and AM substrate. LED micro-array and AM substrate were integrated together using flip-chip technology. When applied proper scan signal and data signal, the LEDoS display panel was programmed row by row and column by column. The LEDoS display panel generates representative micro-display images at a fresh frequency of 200 Hz, demonstrating sufficient driving capability and individually control ability.
Our recent work on high-speed normal-incidence and butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon substrates by MOCVD will also be reported.
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March 8, 2012 - New England SID Meeting
High Resolution Full Color Active Matrix OLED Microdisplays
Organic Light Emitting Diode (OLED) technology has significantly matured over the last decade. Many products are being fielded in the consumer, military, industrial and medical markets. eMagin is the first and only manufacturer of active-matrix OLED microdisplays on silicon. These displays perform at low-power levels, extended temperature ranges and provide image performance that surpasses many other technologies. eMagin’s OLED Microdisplays are designed and manufactured in the U.S.A.
eMagin’s OLED technology uses a highly efficient top-emitter architecture. The emitted light is white and color displays are obtained by incorporating R, G, B color filters over a thin film encapsulated OLED device. High glass-transition temperature (Tg) materials are used so that the devices can withstand a large range of temperatures. The back-plane is made of single crystal silicon and uses CMOS technology for the driving circuitry.
The presentation will encompass an overview of eMagin’s OLED micro-display technology, existing product lines, various applications and products that are under development.
Dr. Amal Ghosh, Sr. Vice President R&D
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